Evolution of Surface morphology on Ion Sputtered of Some III-V (001) Semiconductors

Salah. R. Saeed
Department of General Science, Faculty of Education,School of basic Education –Chamchamal, Sulaimani University,

Surface patterning of some III-V (001) compounds, under ion irradiation, has been
investigated by means of Atomic Force Microscopy. The III-V(001) surfaces were exposed by
Ar+ beam with varying incident angles (from 0° to 80° off-normal) with energy 2.0 keV and
fluence 8.8 x1016 ion/cm2 at room temperature. Depending on the ion incident angle and target
materials, different kinds of nanostructures have been observed on the surfaces, such as
nanocavities, nanodots and well-ordered ripples at the oblique incidence angle of irradiation.
The orientation of the ripples has been found to be incident angle dependent and it elongates
along the projection of the ion beam on the irradiated surface. The RMS roughness and
wavelength of the developed nanostructures are dependent on the angle and type of material.
The results have been discussed in terms of ballistic processes of sputtering and Bradley Harper
theory for surface modifications.

Keywords: Surface patterning, Ion irradiation, Ripples, III-V semiconducting compound, B-H
theory, Atomic force microscopy

[1] Y. Cui and C. M. Lieber, Science 291, 851 (2001).
[2] Y. Huang, X. Duan, Y. Cui, L. J. Lauhon, K.-H. Kim, and C. M. Lieber,
Science 294, 1313 (2001).
[3] R.M. Bradley, J.M.E. Harper, J. Vac. Sci. Technol. A 6, 2390 (1988).
[4] P. Sigmund, Phys. Rev. 184, 383 (1969).
[5] C. Herring, J. Appl. Phys. 21, 301 (1950).
[6] W.W. Mullins, J. Appl. Phys. 28, 333 (1957).
[7] S.W. MacLaren, J.E. Baker, N.L. Finnegan, and C.M.Loxton, J. Vac. Sci.
Technol. A 10, 468 (1992).
[8] J.B. Malherbe, Nucl. Instr. and Meth. in Phys. Res. B 212 ,258–263(2003).
[9] S.R. Saeed, O.P. Sinha, F. Krok, T. Zembok, R. Pedrys, M. Szymonski, , Nucl.
Instr. and Meth. in Phys. Res. B 267, 2752 (2009).
[10] S. R. Saeed , Wasit Journal for Science & Medicine 3 (2): 12 – 19, (2010).
[11] F. Frost , B. Ziberi, T. H€oche, B. Rauschenbach,Nucl. Instr. and Meth. in Phys. Res. B
216, 9–19 (2004).
[12] D. Datta, S.R. Bhattacharyya, T.K. Chini, M.K. Sanyal, Nucl. Instr. and Meth.
in Phys. Res. B 193, 596–602 (2002).
[13] P. Mishra, D. Ghose ,Nucl. Instr. and Meth. in Phys. Res. B 266,1635–1641,
[14] K.V. Sarathlal, Satish Potdar, Mohan Gangrade, V. Ganesan, Ajay Gupta,
Adv. Mat. Lett. 4(6), 398-401 (2013).
[15] B. Ziberi, F. Frost, M. Tartz, H. Neumann, B. Rauschenbach, Thin Solid
Films 459, 106–110 (2004).
[16] F. Frost, A. Schindler, and F. Bigl, Phy. Rev. Letters, 85, 4116 (2000)
[17] S. Facsko, T. Dekorsy, C. Koerdt, C. Trappe, H. Kurz, A. Vogt, and
H. Hartnagel, Science 285, 1551 (1999).
[18] Seungjun Lee, Doctor of Philosophy dissertation (Mechanical Engineering) in
The University of Michigan (2011).