Impurity effects on the Lattice Thermal Conductivity in the Ternary GuG2P3 Semiconductor

Authors

  • Mustafa Saeed Omer College of Science, Salahaddin University, Erbil, Kurdistan Region, Iraq. Author

DOI:

https://doi.org/10.17656/jzs.10118

Keywords:

Lattice thermal conductivity, Semieonductors, CuGe2P3, Ternary compounds

Abstract

The callaway model is used to calculate lattice thermal conductivity for the doped CuGe2Pr semiconductor between 1 and 300K. Generally, the effects of doping with S, Se, Zn, are increase this phenomena exoept for that af Ln-Zt:t doped which is reduces thermal conductivity from that of the undoped samples. The lughest values of r( is found for the 7-n-doped sample to be 0.57Wcm.K while the lowest is found far I*Zn doped to be 0.15 Wcm.K. The effects of the impurity concentrations N at K** is changes according to N0'622 and the r(,* for all concentrations does not affected by the temperature. Results are analysed according to; first, the Rayleih scattering process with the longe wave length effect as well as the resonance scattering process and, second is the dependence on the chemical formation of the compound.

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Published

2003-08-20

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Articles

How to Cite

Impurity effects on the Lattice Thermal Conductivity in the Ternary GuG2P3 Semiconductor. (2003). Journal of Zankoy Sulaimani - Part A, 7(1), 17-24. https://doi.org/10.17656/jzs.10118